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Ankit Bende

Phd Researcher at Forschungszentrum Jülich

Based in Cologne, Germany

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Seniority

Staff

Department

Research & Development

Location

Cologne

Industry

Research

Company size

3.5K

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Email

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a•••••••@fz-juelich.de

Phone

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+49 ••• •••• ••••

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Background

About Ankit Bende

Passion-Driven Semiconductor R&D Expert | eNVM Integration | Nanofabrication | AI Hardware With 7+ years of hands-on R&D experience, I specialize in nanofabrication, CMOS process integration, and advanced characterization of emerging embedded non-volatile memories (eNVMs) such as RRAM and PCM. My work focuses on lab-to-fab technology translation and hardware-based solutions for next-generation computing. Currently, at Forschungszentrum Jülich, Germany, I am advancing beyond-CMOS technologies to power AI and in-memory computing applications. My recent achievements include: Fabricating and integrating ReRAMs at the CMOS 180nm technology node through back-end-of-line (BEOL) processing. Developing ReRAM-based active crossbar arrays for reconfigurable in-memory computing platforms, enabling applications such as logic-in-memory, physically unclonable functions (PUF), and efficient artificial neural networks. Previously, at IIT Bombay, I was part of the team that developed India’s first indigenously designed CMOS 180nm One-Time Programmable (OTP) memory. My key contributions included: Led electrical and physical characterization for yield analysis and failure modeling, resulting in the qualification of OTP memory for production at Semiconductor Complex Chandigarh (SCL) for 8-bit trimming applications. Proposing a tamper-proof, OTP-based ultra-low-power neural network (NN) accelerator for IoT applications. Enabling process integration of advanced NVMs such as Phase Change Memory (PCM) and Flash at SCL’s CMOS 180nm foundry. Technical Expertise Semiconductor Nanofabrication: BEOL CMOS process integration, E-beam & photolithography, Cleanroom processing, Thin film deposition (PVD, CVD, ALD, RTP, solution processing), Dry/wet etching, CMOS 180nm process flow. Physical Characterization: UV-Vis, Photoluminescence, Ellipsometry, AFM, SEM, XRF, Profilometry, FTIR, XPS, Rutherford Backscattering Spectrometry (RBS). Memory Characterization: RRAM array characterization, I-V&C-V measurements, Yield & fault analysis, Retention & endurance testing, Read disturb & variability measurements. Programming & Tools: Python, MATLAB, C. With my strong problem-solving skills, I aspire to contribute to beyond-CMOS technologies, driving the development of next-generation energy-efficient AI hardware. Feel free to reach out if you'd like to learn more about my expertise and experiences.

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