Gary Goncher

Background

About Gary Goncher

I am a scientist/engineer with experience in a broad variety of fields including semiconductor materials research, electrical and optical device design, processing, and test, and high speed circuit design, simulation, and test. My expertise is primarily in the following areas: Nanomaterials growth and nanofabrication • Silicon nanowire growth with p and n doping for FET devices and photovoltaics • Carbon nanotube purification and deposition for thin transparent conductive films • Battery cathode material fabrication with nanocrytalline metal hexacyanoferrates • Silicon integrated circuit definition by e-beam nanolithography Semiconductor process development • Developed a planarizing process for fine pattern lithography over deep topography using plasma-deposited silicon • Developed RIE processes for Si and materials etch • Implemented a full Si integrated IC process using e-beam direct write for all mask layers Optical device design and processing • GaAs and InGaAs PIN photodetector fabrication: materials design, etch development, metals process, device characterization and yield analysis • GaAs VCSEL (vertical cavity surface emitting laser) design and test over an extended temperature range of 10K to 300K. High speed circuit design and simulation • Digital circuit board design for optical communications at OC-12/48/192 data rates. • Video and audio packet encapsulation board design with streaming rates to 1.5 gbps for optical transport. • 6 custom ADC and DAC board designs with clock rates to 12.5 GHz. • Modeling of circuits for noise, reflections, and crosstalk using Cadence and Ansys signal integrity software tools. Instrument design and applications support • Designed a 9 kHz – 6 GHz compact spectrum analyzer with a realtime bandwidth of 40 MHz. • Did applications support for all Tektronix spectrum analyzers, including applications coding, authoring whitepapers on signal types and measurement methods, and presenting at conferences and customer sites.