Jean-Luc Leray

Background

About Jean-Luc Leray

More on my research on (30) and & hl=fr (31)* h-index of 30 meaning 30 papers have been cited at least 30 times (the h-index is a measure the bibliometric impact of papers and their individual authors, researchers, academics, and scholars.* Over 200 publications and communications in Proceedings and other media. In particular over 140 publications in peer-refereed Journals (Researchgate), cited over 2500 times.* A patent on the early times of the birth of SOS/SOI microelectronics technologies (eg Silicon-On-Insulator) concerning effects of high-energy particles.* Now in technical and scientific independent consulting (Iter, CEA) and in Scientific Societies SEE) for Proceedings and Journals editorial work, and teaching. Curricula- Engineering degree in Physics an d Engineering (Master level, CentraleSupelec, Paris, France, 1978) and a Dr d'Etat es Sciences degree (PhD) in Microelectronics from Paris University (Orsay, 1989)- I became a Research Director at CEA, the French Atomic and Alternative Energy Commission, having been active in the field for over 42 years in Radiation Effects and Micro-Nanoelectronics development; Advisor of Technologies (IT, Information Technologies, MNT, Micro-NanoTechnologies)* I have been teaching ExperimentaI Nuclear Physics at undergraduate level (Ecole Centrale de Paris) for 10 years in the 80's; teaching Microelectronics and Radiations Effects in components and systems at Paris XI University in the 90s at the graduate level; Since the 80's teaching Courses on Radiation Effects on Electronics at Conferences in France and abroad, and regularly at Continuing Education Sessions.* Now teaching graduate courses of electronics and sensors in MASTER2 at ESPCI School of Engineering, Paris and Univ Paris-Sorbonne (Instrumentation)* Some Books:*"Micro-Nanotechnologies. Enjeux et Mutations" JL.Leray, JC.Boudenot, J.Gautier, Eds. Issued 23/01/2009, ISBN : 978-2-271-06829-3, 15 x 23 - 498 p *"A Review of Buried Oxides Structures and SOI Technologies", by JL. Leray, Chap. 2 and "Defects and Radiation-Induced Charge Trapping Phenomena in Silica", by P.Paillet and JL.Leray, Chap. 11 in "Instabilities in silicon devices ", Editors G. Barbottin, A. Vapaille, vol. 3 - Elsevier - 933 pages